摘要 有机场效应晶体管(OFET)是现代有机电子元件的重要组成部分.在过去几十年里,高性能OFET方面取得了巨大成功.但是OFET在空气中的稳定性一直是有待解决的问题,特别是在湿度中的稳定性是研究人员关注的关键问题.介绍了OFET的原理、基本参数以及器件结构,系统综述了湿度对n型、p型有机半导体的影响,并提出了改善湿度对OFET器件性能影响的方法。 Organic field effect transistor(OFET)is an important part of modern organic electronic components.In the past few decades,high performance OFET has achieved great success.However,the stability of OFET in air has been a problem to be solved,especially in humidity.This paper introduces the principle,basic parameters and device structure of OFET,particularly the influence of humidity on n-type and p-type organic semiconductor and the stability of different OFET devices in humidity.In addition,the method to improve the effect of humidity on the performance of OFET is proposed.
出处 《伊犁师范学院学报:自然科学版》 2020年第4期31-39,共9页 Journal of Yili Normal University:Natural Science Edition
基金 自治区教育厅高校科研计划项目(XJEDU2019Y058) 国家自然科学基金项目(62061046,51403180).
