《Role of Connection Style in Graphene Negative Differential Resistance Phenomenon》为作者：汪威最新的研究成果，本论文的主要观点为With the combination of graphene nanoribbons (GNRs), quantum well can be constructed in graphene heterojunctions and negative differential resistance (NDR) phenomenon appears, which has the potential for low-dimensional resonant tunneling devices。 While NDR doesn’t simply follow the bandgap difference of GNRs。 Through numerical calculation of a series of double barrier quantum well (DBDQ) structures, forming of same wide GNRs with different connections, the role of connection styles in NDR phenomenon is uncovered in this paper。 In “odd excess” types, the quantized levels in the DBDQ bring the interband tunneling current under suitable bias voltages, resulting in multiple NDR regions。 In “even excess” types, the localization is strong and NDR phenomenon is not significant。 We expect this study can deepen the understanding of NDR in heterojunctions and inspire the development of new NDR devices。不知是否符合录用要求，望您批评与指正。