摘要 为了研究漏极偏压变化对P-GaN器件可靠性的影响,文中对P-GaN商用器件进行漏极应力测试。通过改变漏极应力偏置电压和偏置时间,观察GaN器件导通电阻和阈值电压的变化。测试结果表明,无P-GaN漏极结构的器件导通电阻随着漏极电压变化先增大后减小,而阈值电压几乎不受影响;有P-GaN漏极结构的器件导通电阻几乎不受影响,而阈值电压随着漏极电压变化先减小后增大。通过对器件不同加压时间的测试发现,随着时间增加,无P-GaN漏极结构的器件退化明显;而有P-GaN漏极结构的器件性能较为稳定。不同结构的商用GaN器件可靠性受漏极偏置条件变化的影响不同,应该根据应用条件选择合适器件。 In order to study the influence of drain bias on the reliability of P-GaN devices,the drain stress tests of P-GaN commercial devices is conducted.By changing the drain stress bias voltage and bias time,the on resistance and threshold voltage of GaN device are observed and recorded.The test results show that the on resistance of devices without P-GaN drain structure increases first and then decreases with the change of drain voltage,while the threshold voltage is almost unaffected.The on resistance of devices with P-GaN drain structure is almost unaffected,while the threshold voltage decreases first and then increases with the change of drain voltage.In addition,through the test of different pressurization time,it is found that with the increase of time,the device without P-GaN drain structure has obvious degradation,and the device with P-GaN drain structure has relatively stable performance.The reliability of commercial GaN devices with different structures is affected by the change of drain bias conditions,and the appropriate devices should be selected according to the application conditions.
机构地区 电子科技大学电子科学与工程学院
出处 《电子科技》 2021年第6期56-60,共5页 Electronic Science and Technology
基金 广东省自然科学基金(2019A1515011522)。
关键词 P-GaN器件 可靠性 导通电阻 阈值电压 关态时间 漏极电压 表面陷阱 P-GaN device reliability on-resistance threshold voltage off time drain voltage surface trap
